Fabricante Electrônico | Nome de Peças | Folha de dados | Descrição Electrónicos |
NXP Semiconductors |
LTE3401H
|
214Kb / 17P |
SiGe:C low-noise amplifier MMIC with bypass switch for LTE
Rev. 3-28 June 2019 |
BGS8L5
|
201Kb / 15P |
SiGe:C low-noise amplifier MMIC with bypass switch for LTE
Rev. 1-2 March 2018 |
BGS8M2
|
305Kb / 15P |
SiGe:C low-noise amplifier MMIC with bypass switch for LTE
Rev. 4-13 June 2018 |
BGS8L2
|
242Kb / 18P |
SiGe:C Low-noise amplifier MMIC with bypass switch for LTE
Rev. 6-29 June 2018 |
BGS8L4UK
|
178Kb / 13P |
SiGe:C Low Noise Amplifier MMIC with bypass switch for LTE
Rev. 1-1 December 2015 |
LTE3401L
|
200Kb / 15P |
SiGe:C low-noise amplifier MMIC with bypass switch for LTE
Rev. 3.2-18 December 2018 |
BGS8H2
|
295Kb / 15P |
SiGe:C low-noise amplifier MMIC with bypass switch for LTE
Rev. 3-29 June 2018 |
BGS8U5
|
247Kb / 20P |
SiGe:C low-noise amplifier with bypass switch for LTE/5G NR
Rev. 5-1 December 2021 |
BGU8M1
|
106Kb / 11P |
SiGe:C low-noise amplifier MMIC for LTE
Rev. 3-16 January 2017 |
BGU8H1
|
106Kb / 11P |
SiGe:C low-noise amplifier MMIC for LTE
Rev. 3-16 January 2017 |